Performance
Interface: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0. It can operate at either PCIe 4.0 x4 speeds or at the same bandwidth as PCIe 4.0 when connected to a PCIe 5.0 x2 slot.
Sequential Read Speed (up to): 7,150 MB/s.
Sequential Write Speed (up to): 6,300 MB/s.
Random Read (up to): 850,000 IOPS (4KB, QD32).
Random Write (up to): 1,350,000 IOPS (4KB, QD32).
Write Technology: Features Intelligent TurboWrite 2.0, which uses a portion of the NAND flash as an SLC buffer to accelerate write speeds.
Physical and technical features
Capacity: 1TB (1,000GB).
Form Factor: M.2 (2280).
Controller: Samsung in-house Piccolo controller.
NAND Flash: Samsung V-NAND TLC (236-layer).
Cache: Host Memory Buffer (HMB) instead of dedicated DRAM.
Dimensions: 80.15 x 22.15 x 2.38 mm.
Weight: Max 9.0g.
Data Security: Supports AES 256-bit full disk encryption, TCG/Opal v2.0, and MS eDrive (IEEE1667).
Thermal Control: Features a nickel-coated controller for improved thermal management and power efficiency.
Endurance and reliability
Endurance (TBW): 600 TBW (Total Bytes Written), which is typical for its class.
Mean Time Between Failures (MTBF): 1.5 million hours.
Warranty: 5-year limited warranty.
Power consumption
Active (Average): 4.3W (Read) / 4.2W (Write).
Idle (Typical): 60mW.
Device Sleep (Typical): 5mW.
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